Fabrication of p contact by thermally induced solid state regrowth of Al on p-type Ge crystal

Formation of p + contact on germanium is important for its applications in diode detector and other electronic devices. In this work, thermally deposited Al Ge crystal annealed at 350 °C followed by slow cooling solid-state regrowth Al-Ge . Depth profile analysis secondary ion mass spectrometry (SIMS) carried out to investigate the occurrence along depth regrown layer. Evidence observed due inter-diffusion both across layers although diffusion layer found be more prevalent. Thickness evaporated varied understand , estimate incorporation underneath. Hall measurement different reveals that impurity induces doping p-type concentration gradually reduces towards crystal. Top surface exhibits lowest sheet resistance varies with thickness as • Rugged electrical fabricated solid state Ge. Diffusion Al/Ge interface after annealing cooling. profiling performed length vice versa. control